IBC SHOWCASE: This paper will discuss the effects of ‘memory effect’ on GaN solid state amplifier output power, and CPI’s efforts to mitigate the effect through its use of MCC Technology.Arista’s solutions have long been the choice for cloud titans, financial Institutions, and forward thinking enterprises and are now being adopted by broadcasters, production and media companies.
Over the past 5-10 years, gallium nitride (GaN) technology has become an increasingly popular selection for those wishing to purchase solid state high power amplifiers (SSPAs) for satellite uplink applications. GaN-based SSPAs have not only supplanted traditional applications dominated by their gallium arsenide (GaAs) based predecessors, such as the maritime and milsatcom markets, they have also been readily considered for wideband and multi-carrier applications long dominated by TWT-based amplifiers (TWTA). This is all possible because GaN devices are capable of providing a power density that GaAs devices cannot, on a more cost effective basis. However, a challenge has arisen for SSPA manufacturers selling into these new multi-carrier and wideband markets: a phenomenon which directly impacts the linear performance of SSPA transmissions, dubbed “memory effect.
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